Oxidation of Silicon Carbide Composites for Nuclear Applications at Very High Temperatures in Steam

نویسندگان

چکیده

Single-rod oxidation and quench experiments at very high temperatures in steam atmosphere were conducted with advanced, nuclear grade SiCf/SiC CMC cladding tube segments. A transient experiment was performed until severe local degradation of the sample maximum temperature approximately 1845 °C. The caused by complete consumption external CVD-SiC sealcoat, resulting access to fiber–matrix composite less corrosion resistance. Approaching these accompanied accelerated gas release mainly H2 CO2, formation surface bubbles white smoke. Three one-hour isothermal tests 1700 °C final water flooding one three-hour fast cool-down Ar run under nominally identical conditions. All isothermally tested samples survived without any macroscopic degradation. mechanical performance quenched clad segments not significantly affected, while maintaining a capability tolerate damages. Despite harsh exposure conditions, load transfer between SiC fibers matrix remained efficient, allowing composites accommodate deformation.

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Development of Silicon Carbide Semiconductor Devices for High Temperature Applications

The semiconducting properties of electronic grade silicon carbide (SiC) crystals, such as its wide energy bandgap, make it particularly attractive for high temperature applications. Applications for high temperature electronic devices include instrumentation for engines under development, engine control and condition monitoring systems, and power conditioning and control systems for space platf...

متن کامل

Silicon Carbide Bipolar Integrated Circuits for High Temperature Applications

Silicon carbide (SiC) is a semiconductor that provides significant advantages for high-power and high-temperature applications thanks to its wide bandgap, which is several times larger than silicon. The resulting high breakdown field, high thermal conductivity and high intrinsic temperature (well above 600 °C) allow high temperature operation of SiC devices and relaxed cooling requirements. In ...

متن کامل

Silicon Carbide-Based Hydrogen Gas Sensors for High-Temperature Applications

We investigated SiC-based hydrogen gas sensors with metal-insulator-semiconductor (MIS) structure for high temperature process monitoring and leak detection applications in fields such as the automotive, chemical and petroleum industries. In this work, a thin tantalum oxide (Ta2O5) layer was exploited with the purpose of sensitivity improvement, because tantalum oxide has good stability at high...

متن کامل

Silicon Carbide Bipolar Junction Transistors for High Temperature Sensing Applications

Silicon Carbide Bipolar Junction Transistors for High Temperature Sensing Applications

متن کامل

Fundamental Aspects of Silicon Carbide Oxidation

Silicon carbide (SiC), which exhibits a wider band gap as well as a superior breakdown field and thermal conductivity over conventional Si, has gained considerable attention for future power electronics [1]. Among the various types of power devices, metal-oxide-semiconduc‐ tor field-effect transistors (MOSFETs), which provide a normally-off characteristic, should become a key component for next...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Coatings

سال: 2022

ISSN: ['2079-6412']

DOI: https://doi.org/10.3390/coatings12070875